TO. A. B. BTG. 4Q Triac. 12 June Product data sheet. Scan or click this QR code to view the latest information for this product. 1. General. Philips Semiconductors. Product specification. Triacs. BT series. GENERAL DESCRIPTION. QUICK REFERENCE DATA. Glass passivated triacs in a plastic. BT datasheet, BT pdf, BT data sheet, datasheet, data sheet, pdf, Philips, Triacs.
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Philips Semiconductors reserves the right to change the specification without notice, in ordere to improve the design and supply the best possible product Product data Production This data sheet contains data from the product specification.
June 3 Rev 1.
June 6 Rev 1. Exposure to limiting values for extended periods may affect device reliability.
Application information Where application information is given, it is br137 and does not form part of the specification. UNIT plastic envelope, intended for use in general purpose bidirectional switching BT E E and phase control applications, where VDRM Repetitive peak off-state V high sensitivity is required in all four voltages quadrants.
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Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice.
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June 4 Rev 1. Skip to main content.
Philips Semiconductors reserves the right to change the specification in any manner without notice Preliminary data Qualification This data sheet contains data from the preliminary specification. Maximum permissible non-repetitive peak Fig.
Maximum on-state dissipation, Ptot, versus rms Fig.
BT equivalent datasheet & applicatoin notes – Datasheet Archive
Remember me on this computer. Transient thermal impedance Zth j-mb, versus versus junction temperature Tj. Typical, critical rate of rise of off-state voltage, versus junction temperature Tj. Normalised gate trigger current Fig. Help Center Find new research papers in: Stress above one or more of the limiting values may cause permanent damage to the device. Click here to sign up. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply.
Typical and maximum on-state characteristic. Supplementary data will be published at a later date. June 5 Rev 1. No liability will be accepted by the publisher for any consequence of its use. June 1 Rev 1. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.